SEMICONDUCTOR LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Dec 1, 2016
app pub date -
Oct 19, 2015
filing date -
May 25, 2015
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Abstract
A semiconductor light emitting structure and a manufacturing method thereof are provided. The semiconductor light emitting structure includes a substrate, an epitaxial layer and a stepped electrode. The substrate has a first surface and a second surface opposite to the first surface. The epitaxial layer is formed by a first semiconductor layer, an active layer and a second semiconductor layer which are stacked on the first surface in sequence. The stepped electrode is formed within the epitaxial layer, and includes a main body portion, a step level and a reflection electrode portion extended towards the first surface from the step level. The main body portion at least passes through the second semiconductor layer and the active layer. The reflection electrode portion is extended into the first semiconductor layer from the main body portion.
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