NONLINEAR DIELECTRIC STACK CIRCUIT ELEMENT

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United States of America Patent

APP PUB NO 20160351802A1
SERIAL NO

15111515

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A nonlinear dielectric stack circuit element includes a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant. The third dielectric constant has a value less than the first dielectric constant and the second dielectric constant.

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Patent Owner(s)

Patent OwnerAddress
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP11445 COMPAQ CENTER DRIVE WEST HOUSTON TX 77070

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gibson, Gary Palo Alto, US 96 420
Jackson, Warren San Francisco, US 41 521
Williams, R Stanley Palo Alto, US 274 4582
Yang, Jianhua Palo Alto, US 153 1184

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