Plasma Processing Apparatus and Coil Used Therein
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United States of America Patent
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Issued Date -
Dec 8, 2016
app pub date -
Mar 31, 2014
filing date -
Mar 31, 2014
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Abstract
A plasma etching apparatus includes a chamber having a processing space and a plasma generating space 4 defined therein and a coil 20 wound around the processing chamber, the coil 20 has at least three inward projecting portions 21 formed thereon which project inward in a radial direction with respect to a pitch circle P defined outside a portion of the processing chamber 2 corresponding to the plasma generating space 4, and the at least three inward projecting portions 21 are arranged at equal intervals along a circumferential direction of the pitch circle P.
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