STRESS CONTROL FOR HETEROEPITAXY
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United States of America Patent
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Jun 3, 2015
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Jun 3, 2015
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Stress control using superlattice structures for epitaxy on base wafer substrates, including AlN/GaN superlattices for epitaxy of GaN on silicon {111} substrates. Crack-free GaN cap layers can be grown over superlattice structures containing AlN/GaN superlattice layers. Compressive and tensile stress can be precisely adjusted by changing the thickness of the superlattice layers and the number of superlattice layers. For a constant period thickness, growth conditions, such as growth rate of GaN, V/III ratio during AlN growth, and growth temperature, can be adjusted.
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