Power MOSFET having planar channel, vertical current path, and top drain electrode

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United States of America Patent

PATENT NO 9761702
SERIAL NO

15240831

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Abstract

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In one embodiment, a power MOSFET cell includes an N+ silicon substrate having a drain electrode. An N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed along with a trench having sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into the trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. A buried layer and sinker enable the use of a topside drain electrode.

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Patent Owner(s)

  • MAXPOWER SEMICONDUCTOR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Darwish, Mohamed N Campbell, US 140 2556
Pu, Kui Chengdu, CN 7 112
Su, Shih-Tzung Shulin, TW 11 192
Zeng, Jun Torrance, US 286 2597

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