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Abstract

There is provided a Group III nitride semiconductor light-emitting device in which reduction in the light emission amount in an operation at a high temperature is suppressed. The light-emitting device has an n-side superlattice layer, a light-emitting layer, and a p-type cladding layer. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. A pit diameter D1 of a first pit at an interface between the light-emitting layer and the n-side superlattice layer is larger than a pit diameter D2 of the first pit at an interface between the light-emitting layer and the p-type cladding layer. The pit diameter D1 and the pit diameter D2 satisfy the following condition: 0.15≦(D1−D2)/T≦1.0. Here, the thickness T is the thickness of the light-emitting layer.

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First Claim