Fully-depleted silicon-on-insulator transistors

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United States of America Patent

PATENT NO 9997539
SERIAL NO

15251222

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Abstract

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A fully-depleted silicon-on-insulator (FDSOI) semiconductor structure includes: a first PFET, a second PFET, and a third PFET each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first NFET, a second NFET, and a third NFET each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hook, Terence B Jericho, US 210 1680
Mendez, Horacio Austin, US 5 200

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