Silicon germanium fin formation via condensation
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United States of America Patent
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Jul 4, 2017
Grant Date -
Dec 22, 2016
app pub date -
Jun 19, 2015
filing date -
Jun 19, 2015
priority date (Note) -
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Abstract
A method of forming a finFET device comprises forming a fin in a silicon layer of a substrate, forming a hardmask layer on a top surface of the fin, forming an insulating layer over the fin and the hardmask layer, removing a portion of the insulating layer to expose a portion of the hardmask layer, removing the exposed portion of the hardmask layer to form a cavity that exposes a portion of the silicon layer of the fin, epitaxially growing a silicon germanium (SiGe) material on exposed portions of the silicon layer of the fin in the cavity, and annealing the grown SiGe to drive germanium atoms into the silicon layer of the fin.
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