Recessing RMG metal gate stack for forming self-aligned contact
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 14, 2017
Grant Date -
Dec 22, 2016
app pub date -
Sep 2, 2016
filing date -
Nov 21, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Embodiments of the present invention may include methods of incorporating an embedded etch barrier layer into the replacement metal gate layer of field effect transistors (FETs) having replacement metal gates, as well as the structure formed thereby. The embedded etch stop layer may be composed of embedded dopant atoms and may be formed using ion implantation. The embedded etch stop layer may make the removal of replacement metal gate layers easier and more controllable, providing horizontal surfaces and determined depths to serve as the base for gate cap formation. The gate cap may insulate the gate from adjacent self-aligned electrical contacts.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully