CONTACT-FIRST FIELD-EFFECT TRANSISTORS
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United States of America Patent
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Issued Date -
Dec 22, 2016
app pub date -
Jun 19, 2015
filing date -
Jun 19, 2015
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Abstract
Device structures and fabrication methods for a fin-type field-effect transistor. A first contact, a second contact, and a gate electrode are formed on a fin comprised of a semiconductor material. The second contact is spaced along a length of the fin from the first contact. The gate electrode is positioned along the length of the fin between the first contact and the second contact.
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