On-chip combined hot carrier injection and bias temperature instability monitor
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United States of America Patent
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Jun 25, 2015
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Jun 25, 2015
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Abstract
Methods and circuits for monitoring circuit degradation include measuring degradation in a plurality of on-chip test oscillators that vary according to a quantity that influences hot carrier injection (HCI) degradation. The measured degradation for the plurality of test oscillators is extrapolated to determine a bias temperature instability (BTI) contribution to the measured degradation. The BTI contribution is subtracted from the measured degradation at a predetermined value of the quantity to determine the HCI degradation for devices represented by the predetermined value.
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