Mask blank, phase-shift mask and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 9933698
SERIAL NO

15121124

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Abstract

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To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.

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Patent Owner(s)

  • 501 HOYA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsumoto, Atsushi Tokyo, JP 371 4806
Shishido, Hiroaki Tokyo, JP 100 719
Uchida, Takashi Tokyo, JP 125 1273

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