2T-1R architecture for resistive RAM

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United States of America Patent

PATENT NO 10037801
SERIAL NO

15039784

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Abstract

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A memory device includes a plurality of resistive memory cells and a plurality of word lines. Each resistive memory cell includes a resistive memory element, a first switching element electrically coupled in series with the resistive memory element, and a second switching element electrically coupled in series with the first switching element. The first switching element and the second switching element in each resistive memory cell is coupled to different ones of the word lines.

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Patent Owner(s)

  • HEFEI RELIANCE MEMORY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bronner, Gary Bela Los Altos, US 39 401
Ellis, Wayne Frederick Jericho Center, US 34 564
Haukness, Brent Steven Monte Sereno, US 38 380
Sekar, Deepak Chandra San Jose, US 57 989
Vogelsang, Thomas Mountain View, US 166 1489

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