Semiconductor device structure with 110-PFET and 111-NFET current flow direction

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United States of America Patent

PATENT NO 9761499
SERIAL NO

15246963

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Abstract

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A FinFET comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer; a first set of fins disposed in the top wafer and oriented in a <110> direction of the (100) silicon; and a second set of fins disposed in the handle wafer and oriented in a <112> direction of the (110) silicon. The first set of fins and the second set of fins are aligned.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashemi, Pouya White Plains, US 600 4453
Khakifirooz, Ali Los Altos, US 842 11881
Mochizuki, Shogo Clifton Park, US 298 1878
Reznicek, Alexander Troy, US 1407 11147

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