MEASUREMENT APPARATUS, MEASUREMENT METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160379902A1
SERIAL NO

14849129

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Abstract

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A measurement apparatus according to an embodiment includes an electron emission unit and a detection unit that detects a reflection electron reflected by a recessed shape pattern. In addition, the measurement apparatus includes a time measurement unit that measures a response time from when the electron beam is emitted to when the reflection electron is detected. Further, the measurement apparatus includes a bent amount calculation unit that calculates the amount of bent, i.e., a position deviation amount, between an upper surface portion and a bottom surface portion of the recessed shape pattern. The bent amount calculation unit calculates the amount of bent on the basis of a condition for determining the incidence path of the electron beam to the recessed shape pattern, and the response time.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAGIO, Yoshinori Kuwana, JP 11 61
KOMINE, Nobuhiro Nagoya, JP 42 97

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