FinFET structures having silicon germanium and silicon fins with suppressed dopant diffusion
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United States of America Patent
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Dec 5, 2017
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Jun 25, 2015
filing date -
Jun 25, 2015
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Abstract
A finned structure is fabricated using a bulk silicon substrate having a carbon-doped epitaxial silicon germanium layer. A pFET region of the structure includes fins having silicon germanium top portions and an epitaxial carbon-doped silicon germanium diffusion barrier that suppresses dopant diffusion from the underlying n-well into the silicon germanium fin region during device fabrication. The structure further includes an nFET region including silicon fins formed from the substrate. The carbon-doped silicon germanium diffusion barrier has the same or higher germanium content than the silicon germanium fins.
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