Magnetoresistive element and magnetic memory

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United States of America Patent

PATENT NO 9991314
SERIAL NO

15262117

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Abstract

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A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Daibou, Tadaomi Yokohama, JP 76 1535
Hase, Naoki Shinagawa, JP 39 128
Ito, Junichi Yokohama, JP 210 3215
Kato, Yushi Chofu, JP 49 394
Omine, Shumpei Meguro, JP 11 28

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