III-V gate-all-around field effect transistor using aspect ratio trapping

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United States of America Patent

PATENT NO 9583567
SERIAL NO

15042194

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Abstract

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A field effect transistor includes a trench in a field dielectric material on a crystalline silicon substrate and source/drain features inside the trench. The field effect transistor further includes a channel feature comprising a III-V material in the trench and spanning between the source/drain features, and gate dielectric layers and a gate feature surrounding a portion of the channel feature.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cohen, Guy M Ossining, US 188 2397
Lee, Sanghoon White Plains, US 187 940

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