Diffused tip extension transistor
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United States of America Patent
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May 28, 2019
Grant Date -
Dec 29, 2016
app pub date -
Dec 27, 2013
filing date -
Dec 27, 2013
priority date (Note) -
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Abstract
A method including forming an opening in a junction region of a fin on and extending from a substrate; introducing a doped semiconductor material in the opening; and thermal processing the doped semiconductor material. A method including forming a gate electrode on a fin extending from a substrate; forming openings in the fin adjacent opposite sides of the gate electrode; introducing a doped semiconductor material in the openings; and thermally processing the doped semiconductor material sufficient to induce the diffusion of a dopant in the doped semiconductor material. An apparatus including a gate electrode transversing a fin extending from a substrate; and semiconductor material filled openings in junction regions of the fin adjacent opposite sides of the gate electrode, wherein the semiconductor material comprises a dopant.
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