SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Dec 29, 2016
app pub date -
Mar 30, 2016
filing date -
Jun 23, 2015
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Abstract
A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.
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