Magnetoresistive element

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United States of America Patent

PATENT NO 10103318
APP PUB NO 20160380182A1
SERIAL NO

15262821

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION; SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Won Joon Seoul, KR 38 319
Eeh, Youngmin Seongnam-si, KR 46 234
Kim, Guk Cheon Yeoju-si, KR 9 47
Kim, Yang Kon Incheon-si, KR 4 30
Lee, Bo Mi Suwon-si, KR 15 30
Nagamine, Makoto Seoul, KR 49 1118
Nagase, Toshihiko Seoul, KR 162 2986
Sawada, Kazuya Seoul, KR 76 400
Ueda, Koji Seoul, KR 174 1357
Watanabe, Daisuke Seoul, KR 302 1635

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