Magnetoresistive element and magnetic memory

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United States of America Patent

PATENT NO 10103321
APP PUB NO 20160380185A1
SERIAL NO

15259525

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA; NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Daibou, Tadaomi Yokohama, JP 76 1532
Kato, Yushi Chofu, JP 49 393
Ma, Qinli Sendai, JP 14 79
Miyazaki, Terunobu Sendai, JP 17 262
Mizukami, Shigemi Sendai, JP 11 192
Sugihara, Atsushi Sendai, JP 28 88

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