Power semiconductor circuit having a field effect transistor with low energy losses
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United States of America Patent
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Jul 14, 2020
Grant Date -
Jan 5, 2017
app pub date -
Jun 30, 2016
filing date -
Jun 30, 2015
priority date (Note) -
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Abstract
A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.
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