Microelectronic assemblies formed using metal silicide, and methods of fabrication
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United States of America Patent
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Feb 27, 2018
Issued Date -
N/A
app pub date -
Jul 6, 2016
filing date -
Feb 23, 2015
priority date (Note) -
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Abstract
Two microelectronic components (110, 120), e.g. a die and an interposer, are bonded to each other. One of the components' contact pads (110C) include metal, and the other component has silicon (410) which reacts with the metal to form metal silicide (504). Then a hole (510) is made through one of the components to reach the metal silicide and possibly even the unreacted metal (110C) of the other component. The hole is filled with a conductor (130), possibly metal, to provide a conductive via that can be electrically coupled to contact pads (120C.B) attachable to other circuit elements or microelectronic components, e.g. to a printed circuit board.
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