Nonvolatile semiconductor memory device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9837264
APP PUB NO 20170018558A1
SERIAL NO

15074033

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Abstract

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A nonvolatile semiconductor memory device comprises: a substrate; a memory cell that is disposed on the substrate and accumulates a charge as data; and a cover layer covering the memory cell. The cover layer has a structure in which a first silicon nitride layer, an intermediate layer, and a second silicon nitride layer are stacked sequentially from a memory cell side.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shamoto, Reiko Nagoya, JP 5 12
Takekida, Hideto Nagoya, JP 52 150

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