Importance

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Abstract

A semiconductor device includes a substrate having a source region and a drain region implanted with a second dopant by a second ion implantation. The substrate includes a first well region implanted with a first dopant by a first ion implantation and a second well region blocked from the first ion implantation forming a native section. The drain region is within the native section and the source region is within the first well region. The device includes a gate dielectric layer having a first region with a thickness different from that of a second region of the gate dielectric layer. The first region of the gate dielectric layer is located above the first well region and the second region of the gate dielectric layer is located above the second well region. The device includes a gate electrode disposed on the gate dielectric layer forming a gate structure on the substrate.

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First Claim