UTBB FDSOI split gate devices

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United States of America Patent

PATENT NO 9978848
SERIAL NO

14928603

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Abstract

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An Ultra Thin Body and Box (UTBB) fully depleted silicon on insulator (FDSOI) field effect transistor (FET) employing a split gate topology is provided. A gate dielectric layer is disposed beneath a gate structure and in contact with a channel layer of the device. The gate dielectric layer contains two portions, a thin portion and a thick portion. The thin portion is arranged and configured to reduce a trans-conductance of the device, while a thick portion is arranged and configured to increase the break down voltage of the device. The device further contains a bulk region that can be electrically connected to voltage source to provide control over the threshold voltage of the device.

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Patent Owner(s)

  • AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Akira Irvine, US 503 5443

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