TRANSISTOR INCLUDING TOPOLOGICAL INSULATOR
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United States of America Patent
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Issued Date -
Jan 19, 2017
app pub date -
Jun 27, 2016
filing date -
Jul 15, 2015
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Abstract
Disclosed is a transistor including a topological insulator. The transistor includes: a substrate; a topological insulator provided on the substrate; a drain electrode provided on the topological insulator; a source electrode separated from the drain electrode, provided on the topological insulator, and including a ferromagnetic substance; a tunnel junction layer provided on the source electrode; and a gate electrode provided on the tunnel junction layer. A spin direction of the topological insulator is fixed by a current flowing to a surface thereof, and a spin direction of the source electrode is changed to a predetermined direction by a voltage applied to the gate electrode.
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