Semiconductor memory device

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United States of America Patent

PATENT NO 9769944
SERIAL NO

15050865

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Abstract

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According to one embodiment, a semiconductor memory device includes a conductor layer including a first terminal, and a first insulating layer including a first opening. The first opening includes a first edge and a second edge, a distance between the second edge and the first terminal being larger than a distance between the first edge and the first terminal.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mori, Itaru Kamakura, JP 1 1

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