Semiconductor device and electric power control apparatus
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United States of America Patent
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Apr 11, 2017
Grant Date -
Jan 19, 2017
app pub date -
May 17, 2016
filing date -
Jul 15, 2015
priority date (Note) -
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Abstract
A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been deteLutined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.
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