Plasma-Resistant Component, Method For Manufacturing The Plasma-Resistant Component, And Film Deposition Apparatus Used For Manufacturing The Plasma-Resistant Component
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United States of America Patent
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Jan 26, 2017
app pub date -
Mar 20, 2015
filing date -
Mar 31, 2014
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Abstract
The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 μm, and the deposited oxide film has a film thickness of 10 μm or more and 200 μm or less and a film density of 90% or more. Due to above structure, it becomes possible to obtain a plasma-resistant component and a method of manufacturing a plasma-resistant component in which the generation of particles removed from the component is stably and effectively suppressed, and damage such as corrosion and deformation rarely occur during the regeneration process.
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