Stacked type semiconductor memory device and method for manufacturing the same
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Mar 3, 2016
filing date -
Jul 23, 2015
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Abstract
A semiconductor memory device according to an embodiment, includes a stacked body, first and second semiconductor pillars and a contact. The stacked body includes insulating films and electrode films stacked alternately along a first direction. A configuration of an end portion of the stacked body in a second direction is a stairstep configuration. A step is formed in the stairstep configuration for each of the electrode films. The first semiconductor pillars are disposed in a region of the stacked body where the steps are not formed. The second semiconductor pillars are disposed in a region of the stacked body where the steps are formed. The contact is disposed on the electrode film for each of the steps. When viewed from the first direction, the first and second semiconductor pillars are disposed at some of lattice points of a lattice.
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