Semiconductor Device and Method of Manufacturing the Same
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United States of America Patent
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app pub date -
Oct 4, 2016
filing date -
May 13, 2011
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Abandoned
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Abstract
It is an object to form a buffer circuit, an inverter circuit, or the like using only n-channel TFTs including an oxide semiconductor layer. A buffer circuit, an inverter circuit, or the like is formed by combination of a first transistor in which a source electrode and a drain electrode each overlap with a gate electrode and a second transistor in which a source electrode overlaps with a gate electrode and a drain electrode does not overlap with the gate electrode. Since the second transistor has such a structure, the capacitance Cp can be small, and VA′ can be large even in the case where the potential difference VDD−VSS is small.
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