NITRIDE SEMICONDUCTOR ELEMENT
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United States of America Patent
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Issued Date -
Jan 26, 2017
app pub date -
Feb 25, 2016
filing date -
Jul 21, 2015
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Abstract
According to one embodiment, a nitride semiconductor element includes a p-type semiconductor layer and a p-side electrode. The p-type semiconductor layer includes a nitride semiconductor, and has a first surface. The p-side electrode contacts the first surface. The first surface is a semi-polar plane. The first surface includes a plurality of protrusions. A height of the protrusions along a first direction is not less than 1 nanometer and not more than 5 nanometers. The first direction is from the p-type semiconductor layer toward the p-side electrode. A density of the protrusions in the first surface is more than 1.0×1010/cm2 and not more than 6.1×1010/cm2.
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