COMPOSITION FOR COATING PHOTORESIST PATTERN AND METHOD FOR FORMING FINE PATTERN USING THE SAME
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United States of America Patent
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Issued Date -
Feb 2, 2017
app pub date -
Jan 11, 2016
filing date -
Jul 27, 2015
priority date (Note) -
Abandoned
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Abstract
Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes an ammonium base-containing polymer compound and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.
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