GaN-BASED SCHOTTKY DIODE RECTIFIER
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United States of America Patent
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Feb 2, 2017
app pub date -
Nov 26, 2013
filing date -
Nov 26, 2013
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Abstract
The present disclosure involves a GaN-based Schottky diode rectifier and a method of manufacturing the same. The GaN-based Schottky diode rectifier includes: a substrate, on which a GaN intrinsic layer and a barrier layer are grown in turn; a p-type two-dimension electron gas depletion layer located on an upper surface of the barrier layer; a cathode electrode located at a position on the upper surface of the barrier layer where is different from the position where the p-type two-dimension electron gas depletion layer is formed; and an anode electrode including a first part and a second part electrically connected to each other.
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