Vertical Non-Volatile Semiconductor Devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20170033119A1
SERIAL NO

15165123

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Abstract

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Semiconductor device are provided including a stacked structure having gate electrodes and interlayer insulating layers alternately stacked on a substrate; channel holes extending perpendicular to the substrate through the stacked structure and including channel regions therein; and horizontal parts at lower portions of the stacked structure and including areas in which the channel regions are horizontally elongated from the channel holes. The horizontal parts surround respective channel holes and are connected to each other between at a least portion of the channel holes.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JUNG, Won Bong Seoul, KR 4 46
Park, Kwang Chul Suwon-si, KR 4 71
YUN, Jang Gn Hwaseong-si, KR 14 99

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