METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF DIFFERENT SEMICONDUCTOR MATERIALS
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United States of America Patent
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Issued Date -
Feb 2, 2017
app pub date -
Jul 28, 2015
filing date -
Jul 28, 2015
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Abstract
One illustrative method disclosed herein includes, among other things, individually forming alternating layers of different semiconductor materials in a substrate fin cavity so as to form a multi-layer fin above a recessed substrate fin, wherein each of the layers of different semiconductor materials is formed to a final thickness that is less than a critical thickness of the layer of different semiconductor material being formed, recessing the layer of insulating material so as to expose at least a portion of the multi-layer fin above a recessed upper surface of the layer of insulating material and forming a gate structure around at least a portion of the of exposed the multi-layer fin.
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