Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure
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United States of America Patent
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Sep 12, 2017
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app pub date -
Jul 30, 2015
filing date -
Jul 30, 2015
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Abstract
A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate. The structure further includes a laterally graded silicon germanium alloy material portion located on a second portion of the substrate. The laterally graded silicon germanium alloy material portion is spaced apart from the silicon germanium alloy fin and has end portions having the second germanium content and a middle portion located between the end portions that has a first germanium content that is less than the second germanium content.
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