Localized fin width scaling using a hydrogen anneal

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10312377
APP PUB NO 20170033201A1
SERIAL NO

15291137

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Abstract

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Transistors including one or more semiconductor fins formed on a substrate. The one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners. There is a gate stack on the channel region of the one or more semiconductor fins.

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Patent Owner(s)

  • IBM CORPORATION; RENESAS ELECTRONICS CORPORATION

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4282
Mochizuki, Shogo Tokyo, JP 298 1914
Yamashita, Tenko Schenectady, US 599 4981
Yeh, Chun-Chen Clifton Park, US 417 3476

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