Methods of forming material layer

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United States of America Patent

PATENT NO 10103026
APP PUB NO 20170040172A1
SERIAL NO

15227089

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Abstract

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A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Hyun-jun Seoul, KR 71 722
Kim, Youn-soo Yongin-si, KR 48 242
Lee, Jin-sun Seongnam-si, KR 14 128
Lee, Yong-jae Incheon, KR 67 436
Lim, Han-jin Seoul, KR 51 397
Moon, Sun-min Yongin-si, KR 11 51
Oh, Se-hoon Hwaseong-si, KR 40 916

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