Methods for directly bonding silicon to silicon or silicon carbide to silicon carbide

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United States of America Patent

PATENT NO 9741685
SERIAL NO

15207933

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Abstract

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A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335° C. and less than 1414° C.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jihong Cincinnati, US 37 493
Wei, Jiuan Springboro, US 2 9

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