SELF-CUT SIDEWALL IMAGE TRANSFER PROCESS
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Oct 21, 2016
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Oct 28, 2014
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Abstract
A plurality of mandrels is formed on a silicon substrate. The mandrels are spaced apart at a given pitch, wherein at least one of the plurality of mandrels is formed having a first width, and at least another one of the plurality of mandrels is formed having a second width, and wherein the first width is greater than the second width. At least one structure is formed by removing at least a portion of the plurality of mandrels in a sidewall image transfer process without using a cut mask.
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