Contact Plug Constrained By Dielectric Portions
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United States of America Patent
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Issued Date -
Feb 9, 2017
app pub date -
Aug 3, 2015
filing date -
Aug 3, 2015
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A NAND flash memory includes active areas separated by STI structures in a substrate with a layer of a first dielectric over the substrate. Portions of a second dielectric extend over the STI structures and another layer of the first dielectric extends over both the layer and portions, with contact holes extending through the dielectric layers at locations over the active areas in the semiconductor substrate.
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