Importance

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Abstract

A semiconductor device according to an embodiment includes a first semiconductor region of a first conductivity type, a first insulating unit, a conductive unit, a stacked body, a fourth semiconductor region of a second conductivity type, a fifth semiconductor region of the first conductivity type, a gate electrode, and a gate insulating unit. The stacked body includes multiple second semiconductor regions of the first conductivity type and multiple third semiconductor regions of the second conductivity type. The multiple third semiconductor regions are connected to the conductive unit. The third semiconductor regions are provided alternately with the second semiconductor regions in a first direction from the first semiconductor region toward the portion of the first insulating unit. The gate electrode is provided on one other portion of the first insulating unit. The stacked body is positioned between the gate electrode and the conductive unit in a second direction.

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First Claim