LOW-K SPACER FOR RMG FINFET FORMATION
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United States of America Patent
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app pub date -
Oct 20, 2016
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Feb 27, 2014
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Abstract
A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess.
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