Nonvolatile semiconductor memory including a read operation
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United States of America Patent
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Oct 23, 2018
Grant Date -
Feb 16, 2017
app pub date -
Oct 28, 2016
filing date -
Dec 3, 2008
priority date (Note) -
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Abstract
A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.
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