Magnetoresistive memory device and manufacturing method of the same

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United States of America Patent

PATENT NO 10043852
APP PUB NO 20170047375A1
SERIAL NO

15068159

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Abstract

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According to one embodiment, a magnetoresistive memory device includes first electrodes located in an interlayer insulating film, second electrodes located on the respective first electrodes within the interlayer insulating film, magnetoresistive effect elements on the respective second electrodes, and third electrodes on the respective magnetoresistive effect elements. The first electrodes and the second electrodes are displaced from each other.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanaya, Hiroyuki Seoul, KR 102 1250

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