Semiconductor device and method of fabricating the same
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United States of America Patent
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Apr 30, 2019
Grant Date -
Feb 16, 2017
app pub date -
Oct 27, 2016
filing date -
Jan 23, 2014
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.
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