Importance

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Abstract

A semiconductor light emitting structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, an electrode, a transparent conductive layer, a Bragg reflective layer and a metal layer. The first type semiconductor layer, the active layer and the second type semiconductor layer are stacked sequentially to form an epitaxy layer. The electrode is formed on the first type semiconductor layer. The transparent conductive layer is formed on the second type semiconductor layer. The Bragg reflective layer is formed on the transparent conductive layer. The Bragg reflective layer and electrode are disposed on opposite sides of the epitaxy layer. The metal layer is formed on the Bragg reflective layer. The Bragg reflective layer has a concave portion into which the metal layer is put. The metal layer has a current conducting portion embedded into the concave portion and electrically connected to the transparent conductive layer.

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First Claim